Product Summary

The EPM570T100C5N is an instant-on, non-volatile CPLD, which is based on a 0.18-μm, 6-layermetal-flash process, with densities from 240 to 2,210 logic elements (LEs) (128 to 2,210 equivalent macrocells) and non-volatile storage of 8 Kbits. The EPM570T100C5N offers high I/O counts, fast performance, and reliable fitting versus other CPLD architectures.

Parametrics

EPM570T100C5N absolute maximum ratings: (1)Internal supply voltage With respect to ground: –0.5 to 4.6 V; (2)I/O supply voltage: –0.5 to 4.6 V; (3)DC input voltage: –0.5 to 4.6 V; (4)DC output current, per pin: –25 to 25 mA; (5)Storage temperature No bias: –65 to 150 ℃; (6)Ambient temperature Under bias: –65 to 135 ℃; (7)Junction temperature TQFP and BGA packages under bias: 135 ℃.

Features

EPM570T100C5N features: (1)Low-cost, low-power CPLD; (2)Instant-on, non-volatile architecture; (3)Standby current as low as 29 μA; (4)Provides fast propagation delay and clock-to-output times; (5)Provides four global clocks with two clocks available per logic array block (LAB); (6)UFM block up to 8 Kbits for non-volatile storage; (7)MultiVolt core enabling external supply voltages to the device of either 3.3 V/2.5 V or 1.8 V; (8)MultiVolt I/O interface supporting 3.3-V, 2.5-V, 1.8-V, and 1.5-V logic levels; (9)Bus-friendly architecture including programmable slew rate, drive strength, bushold, and programmable pull-up resistors.

Diagrams

EPM570T100C5N block diagram

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